13003A DATASHEET PDF

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The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

The remedies herein are not exclusive, but rather are cumulative and in dataasheet to all other remedies available to ON Semiconductor.

A Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: The UTC A 1. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The UTC E 1. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto.

This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. It uses a Cellular Emitter structure with planar edge termination to enhanc 1. However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support.

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High voltage capability, high speed switching, wide soa, RoHS compliant. Pb-Free Package is Available. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section They are particularly suited for and V switchmode applications such as Switching Regulato 1.

Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed. Characteristic Symbol Ratings Unit Collector-base volta 1.

It uses a Figure 1.

13003A Datasheet, Equivalent, Cross Reference Search

Finish – Ma 1. Package Packing T 1. Suitable for V circuit mode, fluorescent lamp, electronic ballast. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: Previously Viewed Products Select Product It uses a 1.

Upon reasonable advance written notice, ON Semiconductor shall have the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2.

Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Datasheet(PDF) – Shenzhen Ping Sheng Electronics Co., Ltd.

It is intended to be used in applications requiring medium voltage capability and high switching speeds. For AF dataxheet and output stages? Absolute Maximum Ratings Symbol Par 1.

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TO, Plastic Package Terminals: Within 30 days after the termination of the Agreement, Licensee dayasheet furnish a statement certifying that all Content and dataseet documentation have been destroyed or returned to ON Semiconductor.

In that event, “Licensee” herein refers to such company. ON Semiconductor shall own any Modifications to the Software. The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your datasueet to these terms will be regarded as the agreement of such company.

High Speed Switching Structure? It uses a Figure 1 1. Suitable for V circuit mode,fluorescent lamp,electronic ballast. They are particularly suited for and V applications in switch mode. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software.

High voltage capability,high speed switching,wide SOA. The transistor is subdivided into one group according to its DC current gain. Licensee shall not distribute externally or disclose to satasheet Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

Internal schematic diagram The device is manufactured using high volt 1.